High sputtering targetthan the traditional materials industry, general requirements, such as size, smooth degree, purity, the impurity content, density, N/O/C/S, grain size and defect control; contains higher requirements or special requirements: surface roughness, resistance value, grain size distribution, composition and microstructure, foreign body (oxide) content and size, permeability, ultra high density and ultra-fine grain and so on. Magnetron sputtering is a new physical gas phase deposition method is electronic gun system for the electron emission and focusing on the plated material to be sputtered out atoms obey the momentum transfer principle to higher energy from material toward the substrate deposition film. This is called the sputtering target material plating. Sputtering metal, alloy, ceramic, boride etc..
Magnetron sputtering coating is a new type of physical vapor deposition method, in 2013 the evaporation coating method, its many advantages are quite obvious. As a mature technology, magnetron sputtering has been used in many fields.
Sputtering is one of the main technology of the thin film material preparation, it uses are generated in the ion source ion, in vacuum after accelerating aggregation, and the formation of high speed energy ion beam bombardment of solid surface, ion and a solid surface atoms undergoing kinetic exchange, make the solid surface atoms from solid and deposited on the surface of the substrate, bombarded solid is sputtering film deposition of the raw material, known as the sputtering target material. Various types of sputtered thin film materials have been widely used in semiconductor integrated circuit, recording medium, plane display and surface coating of workpiece.
Sputtering target materials are mainly used in electronics and information industry, such as integrated circuit, information storage, liquid crystal display, laser memory, electronic controller parts; can also be used in the field of glass coating; can also used in wear-resistant materials, high temperature corrosion, high-grade decorative items such as industry.
According to the shape, the shape can be divided into a long target, a square target, a round target, and a special shaped target.
According to the composition can be divided into metal targets, alloy target material, ceramic compound target
According to different application is divided into semiconductor association ceramic target, recording medium ceramic target, display ceramic target, superconducting ceramic target and giant magneto resistance ceramic material
According to the application areas are divided into microelectronics target, magnetic recording material and optical disc target, noble metal target material, thin film resistor target, conductive film target, surface modification of target and mask layer targets, decorative layer target material, electrode material, packaging material and other target
The principle of magnetron sputtering: the sputtering electrode (cathode) between the anode and the plus an orthogonal magnetic field and electric field, in a high vacuum chamber filled the inert gas (usually for Ar gas), permanent magnet on the surface of the target material formation 250 ~ 350 Gauss magnetic field. With the high voltage electric field group into orthogonal electric and magnetic fields. Under the action of electric field, Ar gas ionization in positive ions and electrons, the target with a negative high voltage, sent from the target pole electron ionization probability of the magnetic field and the working gas is increased, in the vicinity of the cathode form high density plasma, Ar ion in under the action of the Lorentz force accelerated toward the target surface, bombard the target surface with a high speed, the target is sputtered atoms obey the momentum conversion principle with high kinetic energy from the target surface toward the substrate deposition film. Magnetron sputtering is generally divided into two types: a tributary of the sputtering and RF sputtering, which is a tributary of the sputtering equipment is simple, in the sputtering of metal, the rate is also fast.
The radio frequency sputtering is more widely used, in addition to the conductive material, it can also be used as a non conducting material, and the material of oxide, nitride and carbide can be prepared by reactive sputtering. If the RF frequency is improved after microwave plasma sputtering, commonly used in the electron cyclotron resonance (ECR) type microwave plasma sputtering.
Magnetron sputtering target:
Metal sputtering target, alloy sputtering target, ceramic sputtering target, boride ceramic sputtering target material, carbide ceramic sputtering target material, fluoride ceramic sputtering target material, nitride ceramic sputtering target material, oxide ceramic target, selenide ceramic sputtering target material, silicide sputtering ceramic target and sulfide ceramic sputtering target material, telluride ceramic sputtering target material, other ceramic target, doped with chromium oxide silicon ceramic target Cr-SiO, indium phosphide targets (INP), arsenic lead target (PbAs), arsenic of indium target (InAs).
High purity and high density of a sputtering target:
1 metal target:
Target, target, target, target, target, target, target, target, target, target, target, silicon, aluminum, titanium, aluminum target, target, target, target, target, target, target nickel target, Ni, Ti target, Ti, Zn, Zn, Cr, Cr, Mg, Mg NB, Nb, Sn, Sn, aluminum target Al, indium, indium, iron, Fe, Zr target zral target, TiAl, zirconium target, Zr, Al Si target AlSi target, Si, Cu Cu target, tantalum target T, a, Ge target, Ge, Ag, Ag, Co, Co, Au, Au, gadolinium, Gd, La, La, y, y, CE CE, tungsten W, stainless steel, nickel chromium target, NiCr, HF, HF, Mo, Mo, Fe Ni target, FeNi, tungsten target, w metal sputtering target materials.
2 ceramic target
ITO and AZO target, Magnesium Oxide, target, target, target of iron oxide silicon nitride, titanium nitride, silicon carbide target target target target, Zinc Oxide chrome, zinc sulfide, silica target, target silicon oxide, cerium oxide target, target two targets and five two zirconia oxide, titanium dioxide, niobium target target two zirconia target two, and hafnium oxide target, target two zirconium boride titanium diboride, tungsten oxide target, target, target five three two aluminum oxide oxidation of two tantalum oxide five, two niobium target, target, target yttrium fluoride, magnesium fluoride, zinc selenide target aluminum nitride target, silicon nitride target, boron nitride titanium nitride silicon carbide target, target, target. Target, target, lithium niobate titanate praseodymium barium titanate target, lanthanum titanate and nickel oxide ceramic target sputtering target.
3 alloy target
Ni Cr alloy target, nickel vanadium alloy target, aluminum silicon alloy target, nickel copper alloy target, titanium aluminum alloy, nickel vanadium alloy target and ferroboron alloy target, ferrosilicon alloy target with high purity alloy sputtering target.